Diode Factor in Solar Cells with Metastable Defects and Back Contact Recombination
نویسندگان
چکیده
To achieve a high fill factor, small diode factor close to 1 is essential. The optical determined by photoluminescence the from neutral zone of solar cell and thus lower bound for factor. Due metastable defects transitions, higher than even at low excitation. Here, influence backside recombination doping level on are studied. First, capacitance simulator (SCAPS) simulations used determine back surface velocity Cu(In, Ga)Se2 with various contacts different levels. Then, experimental results show that both density reduce reduces undesirable extra nonradiative recombination. smaller value achieved can increase quasi-Fermi splitting same time. due an illumination-dependent rate. In addition, majority carrier gain defect reducing
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ژورنال
عنوان ژورنال: Advanced Energy Materials
سال: 2022
ISSN: ['1614-6832', '1614-6840']
DOI: https://doi.org/10.1002/aenm.202202076